Compliance Details

ECCN EAR99
ECCN Governance EAR
HTS Code 8541.29.00.95
SB Code 8541.29.00.80
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Technical Details

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JESD-30 Code R-PSFM-T3
Sub Category FET General Purpose Powers
Configuration SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code TO-220AB
JESD-609 Code e3
Package Shape RECTANGULAR
Package Style FLANGE MOUNT Meter
Surface Mount NO
Terminal Form THROUGH-HOLE
FET Technology METAL-OXIDE SEMICONDUCTOR
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
Terminal Finish Matte Tin (Sn)
Terminal Position SINGLE
Additional Feature AVALANCHE RATED
Number of Elements 1
Number of Terminals 3
Qualification Status Not Qualified
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL
Drain Current-Max (ID) 55 A
Transistor Application SWITCHING
DS Breakdown Voltage-Min 60 V
Operating Temperature-Max 150 Cel
Power Dissipation-Max (Abs) 48 W
Transistor Element Material SILICON
Drain Current-Max (Abs) (ID) 55 A
Avalanche Energy Rating (Eas) 480 mJ
Peak Reflow Temperature (Cel) NOT SPECIFIED
Drain-source On Resistance-Max 0.022 ohm
Pulsed Drain Current-Max (IDM) 220 A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
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