Compliance Details

ECCN EAR99
ECCN Governance EAR
HTS Code 8541.29.00.95
SB Code 8541.29.00.80
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Technical Details

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JESD-30 Code R-PSSO-G2
Sub Category FET General Purpose Power
Configuration SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code TO-252
JESD-609 Code e3
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Surface Mount YES
Terminal Form GULL WING
FET Technology METAL-OXIDE SEMICONDUCTOR
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Terminal Finish Matte Tin (Sn)
Terminal Position SINGLE
Number of Elements 1
Number of Terminals 2
Qualification Status Not Qualified
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL
Drain Current-Max (ID) 3.7 A
Transistor Application SWITCHING
DS Breakdown Voltage-Min 500 V
Operating Temperature-Max 150 Cel
Moisture Sensitivity Level 1
Power Dissipation-Max (Abs) 62.5 W
Transistor Element Material SILICON
Drain Current-Max (Abs) (ID) 3.7 A
Avalanche Energy Rating (Eas) 165 mJ
Peak Reflow Temperature (Cel) NOT SPECIFIED
Drain-source On Resistance-Max 1.75 ohm
Pulsed Drain Current-Max (IDM) 14 A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
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