Compliance Details

  • ECCN Governance
    EAR
  • ECCN
    EAR99
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Packaging type
Packaging condition
Date Code
Additional Information

1 supplier for FDB2532 available

1 supplier available

  • Includes:
  • Scheduled shipping up to a year
  • 3 year warranty
Supply Attributes
Supplier Availability Price Quantity Total
  • Date Code
  • Packaging
    Unknown
  • Pack Condition
    Unknown
  • Supplier Type
    Qualified third party
  • Stock
    800
  • Delivery Date
    OCT 5, 2021
  • 88+
    $ 1.99520
  • 200+
    $ 1.91400
  • 700+
    $ 1.84440
Increments of 1
$ 0.00

Technical Details

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  • JESD-30 Code
    R-PSSO-G2
  • Sub Category
    FET General Purpose Power
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • JEDEC-95 Code
    TO-263AB
  • JESD-609 Code
    e3
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE Meter
  • Surface Mount
    YES
  • Terminal Form
    GULL WING
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Terminal Finish
    Tin (Sn)
  • Terminal Position
    SINGLE
  • Number of Elements
    1
  • Number of Terminals
    2
  • Qualification Status
    Not Qualified
  • Package Body Material
    PLASTIC/EPOXY
  • Polarity/Channel Type
    N-CHANNEL
  • Drain Current-Max (ID)
    8 A
  • Transistor Application
    SWITCHING
  • DS Breakdown Voltage-Min
    150 V
  • Operating Temperature-Max
    175 Cel
  • Operating Temperature-Min
    -55 Cel
  • Moisture Sensitivity Level
    1
  • Power Dissipation-Max (Abs)
    310 W
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    79 A
  • Avalanche Energy Rating (Eas)
    400 mJ
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Drain-source On Resistance-Max
    0.016 ohm
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
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