Compliance Details

  • ECCN Governance
    EAR
  • ECCN
    EAR99
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Packaging type
Packaging condition
Date Code
Additional Information

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Technical Details

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  • JESD-30 Code
    R-PSFM-T4
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • JEDEC-95 Code
    TO-247
  • JESD-609 Code
    e3
  • Package Shape
    RECTANGULAR
  • Package Style
    FLANGE MOUNT Meter
  • Surface Mount
    NO
  • Terminal Form
    THROUGH-HOLE
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Operating Mode
    ENHANCEMENT MODE
  • Terminal Finish
    Tin (Sn)
  • Terminal Position
    SINGLE
  • Number of Elements
    1
  • Number of Terminals
    4
  • Package Body Material
    PLASTIC/EPOXY
  • Polarity/Channel Type
    N-CHANNEL
  • Drain Current-Max (ID)
    75 A
  • Transistor Application
    SWITCHING
  • DS Breakdown Voltage-Min
    650 V
  • Operating Temperature-Max
    150 Cel
  • Operating Temperature-Min
    -55 Cel
  • Power Dissipation-Max (Abs)
    595 W
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    75 A
  • Avalanche Energy Rating (Eas)
    2025 mJ
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Drain-source On Resistance-Max
    0.023 ohm
  • Pulsed Drain Current-Max (IDM)
    300 A
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
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