EDB1332BDBH-1DAAT-F-R
Micron Technology
- Lifecycle statusEOL
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionMICRON - EDB1332BDBH-1DAAT-F-R - DRAM, Mobile LPDDR2, 1 Gbit, 32M x 32bit, 533 MHz, VFBGA, 134 Pins
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.32
- SB Code8542.32.00.15
- I/O TypeCOMMON
- TechnologyCMOS
- Width (mm)10
- Access ModeMULTI BANK PAGE BURST
- Length (mm)11.5
- JESD-30 CodeR-PBGA-B134
- Memory Width32
- Package CodeVFBGA
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- J-STD-609 Codee1
- Memory IC TypeLPDDR2 DRAM
- Operating ModeSYNCHRONOUS
- Refresh Cycles8192
- Number of Ports1
- Terminal FinishTIN SILVER COPPER
- Terminal PositionBOTTOM
- Memory Organization32MX32
- Number of Functions1
- Number of Terminals134
- Terminal Pitch (mm)0.65
- Number of Words Code32M
- Memory Density (bits)1073741824
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Seated Height-Max (mm)1
- Supply Voltage-Max (V)1.3
- Supply Voltage-Min (V)1.14
- Supply Voltage-Nom (V)1.2
- Number of Words (words)33554432
- Sequential Burst Length4,8,16
- Interleaved Burst Length4,8,16
- Package Equivalence CodeBGA134,9X17,25
- Clock Frequency-Max (MHz)533
- Operating Temperature-Max (Cel)105
- Operating Temperature-Min (Cel)-40
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EDB1332BDBH-1DAAT-F-R