CY7C1332AV25-200BGXC
Cypress Semiconductor Corporation
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionLate-Write SRAM, 1MX18, 2.25ns, CMOS, PBGA119
- Category
- ECCN3A991.b.2.a
- ECCN GovernanceEAR
- HTS Code8542.32.00.41
- SB Code8542.32.00.40
- I/O TypeCOMMON
- TechnologyCMOS
- Width (mm)14
- Length (mm)22
- JESD-30 CodeR-PBGA-B119
- Memory Width18
- Package CodeBGA
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY Meter
- Surface MountYES
- Terminal FormBALL
- J-STD-609 Codee1
- Memory IC TypeLATE-WRITE SRAM
- Operating ModeSYNCHRONOUS
- Parallel/SerialPARALLEL
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- DLA QualificationNot Qualified
- Temperature GradeCOMMERCIAL
- Terminal PositionBOTTOM
- Additional FeaturePIPELINED ARCHITECTURE
- Memory Organization1MX18
- Number of Functions1
- Number of Terminals119
- Terminal Pitch (mm)1.27
- Access Time-Max (ns)2.25
- Number of Words Code1M
- Memory Density (bits)18874368
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Seated Height-Max (mm)2.4
- Supply Voltage-Max (V)2.63
- Supply Voltage-Min (V)2.37
- Supply Voltage-Nom (V)2.5
- Number of Words (words)1048576
- Standby Current-Max (A)0.26
- Standby Voltage-Min (V)2.37
- Supply Current-Max (mA)550
- Package Equivalence CodeBGA119,7X17,50
- Moisture Sensitivity Level3
- Peak Reflow Temperature (Cel)260
- Operating Temperature-Max (Cel)70
- Operating Temperature-Min (Cel)0
- Time@Peak Reflow Temperature-Max (s)20
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CY7C1332AV25-200BGXC