CXK77N18R160GB-33 by Sony Corporation | Sourcengine

Sony Corporation CXK77N18R160GB-33

Lifecycle status
Discontinued
Description
Late-Write SRAM, 1MX18, 1.7ns, CMOS, PBGA119
Category
Semiconductors Memory ICs SRAMs LATE-WRITE SRAM

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
Width (mm)
14
Length (mm)
22
JESD-30 Code
R-PBGA-B119
Memory Width
18
Package Code
BGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY Meter
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e0
Memory IC Type
LATE-WRITE SRAM
Operating Mode
SYNCHRONOUS
Parallel/Serial
PARALLEL
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Temperature Grade
OTHER
Terminal Position
BOTTOM
Additional Feature
IT CAN ALSO OPERATE WITH 2.5V NOMINAL SUPPLY
Memory Organization
1MX18
Number of Functions
1
Number of Terminals
119
Terminal Pitch (mm)
1.27
Access Time-Max (ns)
1.7
Number of Words Code
1M
Memory Density (bits)
18874368
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
2.4
Supply Voltage-Max (V)
2.63
Supply Voltage-Min (V)
1.7
Supply Voltage-Nom (V)
1.8
Number of Words (words)
1048576
Standby Current-Max (A)
0.16
Standby Voltage-Min (V)
1.7
Supply Current-Max (mA)
500
Package Equivalence Code
BGA119,7X17,50
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
0