BUZ11S2-E3046
Siemens AG
- Lifecycle statusTransferred
- DescriptionPower Field-Effect Transistor, 30A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- ApplicationSWITCHING
- JESD-30 CodeR-PSIP-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)30
- Transistor Element MaterialSILICON
- Turn-on Time-Max (ton) (ns)110
- DS Breakdown Voltage-Min (V)60
- Feedback Cap-Max (Crss) (pF)250
- Turn-off Time-Max (toff) (ns)270
- Operating Temperature-Max (Cel)150
- Power Dissipation Ambient-Max (W)75
- Avalanche Energy Rating (Eas) (mJ)14
- Pulsed Drain Current-Max (IDM) (A)120
- Drain-source On Resistance-Max (ohm)0.04
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BUZ11S2-E3046