BUY25CS54A-01(P)
INFINEON TECHNOLOGIES AG
- Lifecycle statusActive
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 54A I(D), 250V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-XBCC-N3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleCHIP CARRIER Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionBOTTOM
- Number of Elements1
- Number of Terminals3
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)54
- Transistor Element MaterialSILICON
- Turn-on Time-Max (ton) (ns)160
- DS Breakdown Voltage-Min (V)250
- Feedback Cap-Max (Crss) (pF)30
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Turn-off Time-Max (toff) (ns)210
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Avalanche Energy Rating (Eas) (mJ)380
- Pulsed Drain Current-Max (IDM) (A)214
- Drain-source On Resistance-Max (ohm)0.03
- Screening Level / Reference StandardESA/SCC 5205/027; RH - 100K Rad(Si)
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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