- Lifecycle statusActive
- DescriptionPower Field-Effect Transistor, 14A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ConfigurationSINGLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Number of Elements1
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)14
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)200
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BUK553
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BUK553