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ECCN EAR99
ECCN Governance EAR
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Technical Details

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VCEsat-Max 2.6 V
JESD-30 Code R-XUFM-X39
Sub Category Insulated Gate BIP Transistors
Configuration BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Package Shape RECTANGULAR
Package Style FLANGE MOUNT Meter
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Number of Elements 6
Number of Terminals 39
Qualification Status Not Qualified
Package Body Material UNSPECIFIED
Polarity/Channel Type N-CHANNEL
Gate-emitter Voltage-Max 20 V
Operating Temperature-Max 125 Cel
Collector Current-Max (IC) 125 A
Power Dissipation-Max (Abs) 500 W
Transistor Element Material SILICON
Collector-emitter Voltage-Max 1200 V
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