BG3430RE6327HTSA1
INFINEON TECHNOLOGIES AG
- Lifecycle statusEOL
- DescriptionMOSFET N-CH DUAL 8V 25MA SOT-363
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeR-PDSO-G6
- Configuration2 N-Channel (Dual)
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeDUAL GATE, DEPLETION MODE
- Terminal PositionDUAL
- Additional FeatureLOW NOISE
- Number of Elements2
- Number of Terminals6
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandULTRA HIGH FREQUENCY BAND
- Drain Current-Max (ID) (A)0.025
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)12
- Screening Level / Reference StandardAEC-Q101
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BG3430RE6327HTSA1