ATF-55143-TR2
Broadcom Inc.
- Lifecycle statusDiscontinued
- DescriptionRF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.21.00.75
- SB Code8541.21.00.80
- JESD-30 CodeR-PDSO-G4
- ConfigurationSINGLE
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyHIGH ELECTRON MOBILITY
- Operating ModeENHANCEMENT MODE
- Case ConnectionSOURCE
- Terminal FinishTIN LEAD
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals4
- Power Gain-Min (Gp)15.5 dB
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)0.1 A
- Highest Frequency BandC BAND
- Transistor ApplicationAMPLIFIER
- DS Breakdown Voltage-Min5 V
- Operating Temperature-Max150 Cel
- Transistor Element MaterialSILICON
- Power Dissipation Ambient-Max0.27 W
0 suppliers available to buy or to bid for ATF-55143-TR2
Send an RFQ
Your RFQ will be directly sent to our expert: Pari
Send an RFQ
ATF-55143-TR2