ATF-521P8-TR1
Broadcom Inc.
- Lifecycle statusEOL
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionRF JFET Transistors Transistor GaAs High Linearity
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.75
- SB Code8541.29.00.80
- JESD-30 CodeS-PDSO-N8
- ConfigurationSINGLE
- JEDEC-95 CodeMO-229
- JESD-609 Codee3
- Package ShapeSQUARE
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyHIGH ELECTRON MOBILITY
- Operating ModeENHANCEMENT MODE
- Case ConnectionSOURCE
- Terminal FinishMATTE TIN
- Terminal PositionDUAL
- Additional FeatureLOW NOISE
- Number of Elements1
- Number of Terminals8
- Power Gain-Min (Gp)15.5 dB
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)0.5 A
- Highest Frequency BandL BAND
- Transistor ApplicationAMPLIFIER
- DS Breakdown Voltage-Min7 V
- Operating Temperature-Max150 Cel
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- Peak Reflow Temperature (Cel)260
- Power Dissipation Ambient-Max1.5 W
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ATF-521P8-TR1