AS5C1008DJECJ-20XT
AUSTIN SEMICONDUCTOR INC
- Lifecycle statusTransferred
- DescriptionCache SRAM, 128KX8, 20ns, CMOS, CDSO32
- Category
- ECCN3A991.b.2.b
- ECCN GovernanceEAR
- HTS Code8542.32.00.41
- SB Code8542.32.00.40
- TechnologyCMOS
- Width (mm)10.2
- Length (mm)21
- JESD-30 CodeR-CDSO-J32
- Memory Width8
- Package CodeSOJ
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormJ BEND
- J-STD-609 Codee0
- Memory IC TypeCACHE SRAM
- Operating ModeASYNCHRONOUS
- Parallel/SerialPARALLEL
- Terminal FinishTIN LEAD
- DLA QualificationNot Qualified
- Temperature GradeMILITARY
- Terminal PositionDUAL
- Additional FeatureLOW POWER STANDBY MODE
- Memory Organization128KX8
- Number of Functions1
- Number of Terminals32
- Terminal Pitch (mm)1.27
- Access Time-Max (ns)20
- Number of Words Code128K
- Memory Density (bits)1048576
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Seated Height-Max (mm)3.7
- Supply Voltage-Max (V)5.5
- Supply Voltage-Min (V)4.5
- Supply Voltage-Nom (V)5
- Number of Words (words)131072
- Operating Temperature-Max (Cel)125
- Operating Temperature-Min (Cel)-55
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AS5C1008DJECJ-20XT