APTM100UM60FAG
Microsemi Corporation
- Lifecycle statusTransferred
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 129A I(D), 1000V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PUFM-X2
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee1
- Operating ModeENHANCEMENT MODE
- Terminal FinishTIN SILVER COPPER
- DLA QualificationNot Qualified
- Terminal PositionUPPER
- Additional FeatureAVALANCHE RATED
- Number of Elements1
- Number of Terminals2
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)129
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)1000
- Operating Temperature-Max (Cel)150
- Avalanche Energy Rating (Eas) (mJ)3000
- Pulsed Drain Current-Max (IDM) (A)516
- Drain-source On Resistance-Max (ohm)0.07
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APTM100UM60FAG