APT801R2BN-GULLWING by ADVANCED POWER TECHNOLOGY INC | Sourcengine

ADVANCED POWER TECHNOLOGY INC APT801R2BN-GULLWING

Lifecycle status
Discontinued
Description
Power Field-Effect Transistor, 9A I(D), 800V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

JESD-30 Code
R-PSFM-G3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
9 A
Turn-on Time-Max (ton)
55 ns
Feedback Cap-Max (Crss)
127 pF
DS Breakdown Voltage-Min
800 V
Turn-off Time-Max (toff)
120 ns
Operating Temperature-Max
150 Cel
Transistor Element Material
SILICON
Power Dissipation Ambient-Max
240 W
Drain-source On Resistance-Max
1.2 ohm
Pulsed Drain Current-Max (IDM)
36 A