APT751R4AN
ADVANCED POWER TECHNOLOGY INC
- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 7.5A I(D), 750V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeO-MBFM-P2
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-204AA
- JESD-609 Codee0
- Package ShapeROUND
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormPIN/PEG
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishTIN LEAD
- Terminal PositionBOTTOM
- Number of Elements1
- Number of Terminals2
- Qualification StatusNot Qualified
- Package Body MaterialMETAL
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)7.5 A
- DS Breakdown Voltage-Min750 V
- Operating Temperature-Max150 Cel
- Power Dissipation-Max (Abs)198 W
- Transistor Element MaterialSILICON
- Drain-source On Resistance-Max1.4 ohm
- Pulsed Drain Current-Max (IDM)30 A
0 suppliers available to buy or to bid for APT751R4AN
Send an RFQ
Send an RFQ Your RFQ will be directly sent to our expert: Pari
Send an RFQ
APT751R4AN
Send an RFQ
APT751R4AN