AP9973GD
Advanced Power Electronics Corp.
- Lifecycle statusContact Mfr
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 3.9A I(D), 60V, 0.08ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDIP-T8
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionDUAL
- Number of Elements2
- Number of Terminals8
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)3.9 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min60 V
- Operating Temperature-Max150 Cel
- Transistor Element MaterialSILICON
- Drain-source On Resistance-Max0.08 ohm
- Pulsed Drain Current-Max (IDM)20 A
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AP9973GD
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AP9973GD