AP6922GMT-HF
Advanced Power Electronics Corp.
- Lifecycle statusContact Mfr
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 30V, 0.0085ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDSO-F6
- ConfigurationSERIES, 2 ELEMENTS WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN SOURCE
- Terminal PositionDUAL
- Number of Elements2
- Number of Terminals6
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min30 V
- Transistor Element MaterialSILICON
- Drain-source On Resistance-Max0.0085 ohm
- Pulsed Drain Current-Max (IDM)40 A
0 suppliers available to buy or to bid for AP6922GMT-HF
Send an RFQ
Your RFQ will be directly sent to our expert: Pari
Send an RFQ
AP6922GMT-HF