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AM29F010-120DWE1

Advanced Micro Devices, Inc. (AMD)

Advanced Micro Devices, Inc. (AMD) AM29F010-120DWE1
  • ECCN
    3A001.a.2.c
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.51
  • SB Code
    8542.32.00.50
  • Type
    NOR TYPE
  • Technology
    CMOS
  • JESD-30 Code
    X-XUUC-N30
  • Memory Width
    8
  • Package Code
    DIE
  • Package Shape
    UNSPECIFIED
  • Package Style
    UNCASED CHIP Meter
  • Surface Mount
    YES
  • Terminal Form
    NO LEAD
  • Memory IC Type
    FLASH
  • Operating Mode
    ASYNCHRONOUS
  • Parallel/Serial
    PARALLEL
  • DLA Qualification
    Not Qualified
  • Temperature Grade
    MILITARY
  • Terminal Position
    UPPER
  • Additional Feature
    MINIMUM 100K PROGRAM/ERASE CYCLE; 20 YEAR DATA RETENTION
  • Memory Organization
    128KX8
  • Number of Functions
    1
  • Number of Terminals
    30
  • Access Time-Max (ns)
    120
  • Number of Words Code
    128K
  • Memory Density (bits)
    1048576
  • Package Body Material
    UNSPECIFIED
  • Output Characteristics
    3-STATE
  • Supply Voltage-Max (V)
    5.5
  • Supply Voltage-Min (V)
    4.5
  • Supply Voltage-Nom (V)
    5
  • Data Retention Time-Min
    20
  • Number of Words (words)
    131072
  • Programming Voltage (V)
    5
  • Operating Temperature-Max (Cel)
    125
  • Operating Temperature-Min (Cel)
    -55

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AM29F010-120DWE1