AIMBG120R040M1 by INFINEON TECHNOLOGIES AG | Sourcengine

INFINEON TECHNOLOGIES AG AIMBG120R040M1

Lifecycle status
Active
RoHS
RoHS compliant
REACH
REACH compliant
Description
Power Field-Effect Transistor, 54A I(D), 1200V, 0.05ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-263
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSSO-G7
Configuration
SINGLE WITH BUILT-IN DIODE AND KELVIN SENSOR
JEDEC-95 Code
TO-263
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
7
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
268
Drain Current-Max (ID) (A)
54
Moisture Sensitivity Level
1
Transistor Element Material
SILICON CARBIDE
DS Breakdown Voltage-Min (V)
1200
Feedback Cap-Max (Crss) (pF)
3.6
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
269
Pulsed Drain Current-Max (IDM) (A)
139
Drain-source On Resistance-Max (ohm)
0.05
Screening Level / Reference Standard
AEC-Q101