AF2302NWLA
Diodes Incorporated
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- DescriptionPower Field-Effect Transistor, 2.4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ConfigurationSINGLE
- Surface MountYES
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Number of Elements1
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)2.4 A
- Operating Temperature-Max150 Cel
- Power Dissipation-Max (Abs)1.25 W
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
0 suppliers available to buy or to bid for AF2302NWLA
Send an RFQ
Send an RFQ Your RFQ will be directly sent to our expert: Pari
Send an RFQ
AF2302NWLA
Send an RFQ
AF2302NWLA