934060154315
Nexperia BV
- Lifecycle statusActive
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 1.87A I(D), 30V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PBCC-N3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleCHIP CARRIER Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee3
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishTin (Sn)
- Terminal PositionBOTTOM
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)2.5
- Drain Current-Max (ID) (A)1.87
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)30
- Feedback Cap-Max (Crss) (pF)5.4
- Peak Reflow Temperature (Cel)260
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Pulsed Drain Current-Max (IDM) (A)3.74
- Drain-source On Resistance-Max (ohm)0.42
- Screening Level / Reference StandardIEC-60134
- Time@Peak Reflow Temperature-Max (s)30
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934060154315