934056479118 by Nexperia BV | Sourcengine

Nexperia BV 934056479118

Lifecycle status
Discontinued
RoHS
RoHS compliant
Description
Power Field-Effect Transistor, 53A I(D), 75V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Tin (Sn)
Terminal Position
SINGLE
Additional Feature
LOW CONDUCTION LOSS
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
138
Drain Current-Max (ID) (A)
53
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
75
Feedback Cap-Max (Crss) (pF)
300
Peak Reflow Temperature (Cel)
245
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
120
Pulsed Drain Current-Max (IDM) (A)
213
Drain-source On Resistance-Max (ohm)
0.023
Screening Level / Reference Standard
AEC-Q101; IEC-60134
Time@Peak Reflow Temperature-Max (s)
30