934033450115 by Nexperia BV | Sourcengine

Nexperia BV 934033450115

Lifecycle status
NRFND
RoHS
RoHS compliant
REACH
REACH compliant
Description
Power Field-Effect Transistor, 3A I(D), 30V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-G4
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Tin (Sn)
Terminal Position
DUAL
Additional Feature
FAST SWITCHING
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (W)
5
Drain Current-Max (ID) (A)
3
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
80
DS Breakdown Voltage-Min (V)
30
Feedback Cap-Max (Crss) (pF)
50
Peak Reflow Temperature (Cel)
260
Turn-off Time-Max (toff) (ns)
140
Operating Temperature-Max (Cel)
150
Pulsed Drain Current-Max (IDM) (A)
12
Drain-source On Resistance-Max (ohm)
0.4
Screening Level / Reference Standard
IEC-134
Time@Peak Reflow Temperature-Max (s)
30