8N60G-T2Q-T
UTC, Ltd.
- Lifecycle statusActive
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 7.5A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PSIP-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-262AA
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)147
- Drain Current-Max (ID) (A)7.5
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)600
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Operating Temperature-Max (Cel)150
- Avalanche Energy Rating (Eas) (mJ)230
- Pulsed Drain Current-Max (IDM) (A)30
- Drain-source On Resistance-Max (ohm)1.2
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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