89007-2N7125TXV
Renesas Electronics Corp.
- Lifecycle statusActive-Unconfirmed
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 14A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeO-MBFM-P2
- ConfigurationSINGLE
- JEDEC-95 CodeTO-204AA
- Package ShapeROUND
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormPIN/PEG
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionBOTTOM
- Additional FeatureHIGH RELIABILITY
- Number of Elements1
- Number of Terminals2
- Package Body MaterialMETAL
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)150
- Drain Current-Max (ID) (A)14
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)400
- Drain-source On Resistance-Max (ohm)0.3
- Screening Level / Reference StandardMIL-PRF-19500
0 suppliers available to buy or to bid for 89007-2N7125TXV
Send an RFQ
Your RFQ will be directly sent to our expert: Pari
Send an RFQ
89007-2N7125TXV