6AM15
Renesas Technology Corp.
- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 10A I(D), 60V, 0.115ohm, 6-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSFM-T12
- ConfigurationCOMPLEX
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionSINGLE
- Number of Elements6
- Number of Terminals12
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
- Drain Current-Max (ID)10 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min60 V
- Transistor Element MaterialSILICON
- Drain-source On Resistance-Max0.115 ohm
- Pulsed Drain Current-Max (IDM)40 A
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