5N50G-P-T2Q-T
UTC, Ltd.
- Lifecycle statusActive
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PSIP-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-262AA
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)73
- Drain Current-Max (ID) (A)5
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)500
- Feedback Cap-Max (Crss) (pF)10
- Operating Temperature-Max (Cel)150
- Avalanche Energy Rating (Eas) (mJ)190
- Pulsed Drain Current-Max (IDM) (A)20
- Drain-source On Resistance-Max (ohm)1.6
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5N50G-P-T2Q-T