2SK3846
Toshiba Corporation
- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 26A I(D), 40V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PSIP-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee0
- Operating ModeENHANCEMENT MODE
- Terminal FinishTIN LEAD
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)25
- Drain Current-Max (ID) (A)26
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)40
- Feedback Cap-Max (Crss) (pF)210
- Operating Temperature-Max (Cel)150
- Avalanche Energy Rating (Eas) (mJ)63
- Pulsed Drain Current-Max (IDM) (A)78
- Drain-source On Resistance-Max (ohm)0.016
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2SK3846