2SK3797
Toshiba Corporation
- Lifecycle statusEOL
- RoHSRoHS compliant
- DescriptionPower Field-Effect Transistor, 13A I(D), 600V, 0.43ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)50
- Drain Current-Max (ID) (A)13
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)600
- Feedback Cap-Max (Crss) (pF)20
- Operating Temperature-Max (Cel)150
- Avalanche Energy Rating (Eas) (mJ)1033
- Pulsed Drain Current-Max (IDM) (A)52
- Drain-source On Resistance-Max (ohm)0.43
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2SK3797