2SK3754(F) by Toshiba Corporation | Sourcengine

Toshiba Corporation 2SK3754(F)

Lifecycle status
Discontinued
RoHS
RoHS compliant
Description
Power Field-Effect Transistor, 5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSFM-T3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
25
Drain Current-Max (ID) (A)
5
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
30
Feedback Cap-Max (Crss) (pF)
155
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
4
Pulsed Drain Current-Max (IDM) (A)
15
Drain-source On Resistance-Max (ohm)
0.099