2SC5551AE-TD-E
ONSEMI
- Lifecycle statusNRFND
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionTrans RF BJT NPN 30V 0.3A 1300mW 4-Pin(3+Tab) SOT-89 T/R
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSSO-F3
- ConfigurationSINGLE
- JEDEC-95 CodeTO-243
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormFLAT
- J-STD-609 Codee6
- Case ConnectionCOLLECTOR
- Terminal FinishTin/Bismuth (Sn/Bi)
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeNPN
- Highest Frequency BandS BAND
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- Peak Reflow Temperature (Cel)260
- Collector Current-Max (IC) (A)0.3
- Collector-emitter Voltage-Max (V)30
- Collector-base Capacitance-Max (pF)4
- Transition Frequency-Nom (fT) (MHz)3500
- Time@Peak Reflow Temperature-Max (s)30
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2SC5551AE-TD-E