2N7002E-T1-GE3
Vishay Intertechnology, Inc.
- Lifecycle statusNRFND
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionTrans MOSFET N-CH 60V 0.24A 3-Pin SOT-23 T/R
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDSO-G3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-236AB
- JESD-609 Codee3
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal FinishMATTE TIN
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)0.24 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min60 V
- Operating Temperature-Max150 Cel
- Moisture Sensitivity Level1
- Power Dissipation-Max (Abs)0.35 W
- Transistor Element MaterialSILICON
- Peak Reflow Temperature (Cel)260
- Drain-source On Resistance-Max3 ohm
- Time@Peak Reflow Temperature-Max (s)30
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2N7002E-T1-GE3