2N6902TXV
Intersil Corporation
- Lifecycle statusTransferred
- DescriptionPower Field-Effect Transistor, 12A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeO-MBFM-P2
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-204AA
- Package ShapeROUND
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormPIN/PEG
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- DLA QualificationNot Qualified
- Terminal PositionBOTTOM
- Additional FeatureLOGIC LEVEL COMPATIBLE, RADIATION HARDENED
- Number of Elements1
- Number of Terminals2
- Package Body MaterialMETAL
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)12
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)100
- Pulsed Drain Current-Max (IDM) (A)30
- Drain-source On Resistance-Max (ohm)0.2
- Screening Level / Reference StandardMILITARY STANDARD (USA)
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2N6902TXV