2N6661CSM4-JQR-BG4 by TT ELECTRONICS PLC | Sourcengine

TT ELECTRONICS PLC 2N6661CSM4-JQR-BG4

Lifecycle status
Discontinued
RoHS
RoHS compliant
REACH
REACH compliant
Description
Power Field-Effect Transistor, 0.9A I(D), 90V, 5.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-041BA
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-CDSO-N4
Configuration
SINGLE
JEDEC-95 Code
MO-041BA
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e4
Operating Mode
ENHANCEMENT MODE
Terminal Finish
GOLD
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
4
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
0.9
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
90
Operating Temperature-Max (Cel)
150
Pulsed Drain Current-Max (IDM) (A)
3
Drain-source On Resistance-Max (ohm)
5.3