- Lifecycle statusDiscontinued
- DescriptionPower Bipolar Transistor, 12A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 3 Pin
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeO-MRDB-F3
- ConfigurationSINGLE
- Package ShapeROUND
- Package StyleDISK BUTTON Meter
- Surface MountYES
- Terminal FormFLAT
- Case ConnectionISOLATED
- Terminal PositionRADIAL
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialMETAL
- Polarity/Channel TypeNPN
- Transistor ApplicationSWITCHING
- DC Current Gain-Min (hFE)20
- Operating Temperature-Max175 Cel
- Collector Current-Max (IC)12 A
- Power Dissipation-Max (Abs)1.2 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max80 V
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Transition Frequency-Nom (fT)40 MHz
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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2N3552