2MBI600VE-120-50 by Fuji Electric Co., Ltd. | Sourcengine

Fuji Electric Co., Ltd. 2MBI600VE-120-50

Lifecycle status
Active
RoHS
RoHS compliant
Description
Insulated Gate Bipolar Transistor, 520A I(C), 1200V V(BR)CES, N-Channel
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-XUFM-X7
Configuration
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
VCEsat-Max (V)
2.55
Case Connection
ISOLATED
Terminal Position
UPPER
Number of Elements
2
Number of Terminals
7
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
600
Gate-emitter Voltage-Max (V)
20
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Turn-off Time-Nom (toff) (ns)
800
Collector Current-Max (IC) (A)
520
Operating Temperature-Max (Cel)
175
Gate-emitter Thr Voltage-Max (V)
7.2
Collector-emitter Voltage-Max (V)
1200
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED