2C6661
SILICON TRANSISTOR CORP
- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 0.4A I(D), 90V, 5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeX-XUUC-N
- ConfigurationSEPARATE, 4 ELEMENTS
- Package ShapeUNSPECIFIED
- Package StyleUNCASED CHIP Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- DLA QualificationNot Qualified
- Terminal PositionUPPER
- Number of Elements4
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)0.4
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)90
- Drain-source On Resistance-Max (ohm)5
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2C6661