2735GN-35M
Microsemi Corporation
- Lifecycle statusTransferred
- DescriptionRF Power Field-Effect Transistor, 1-Element, S Band, Silicon Carbide, N-Channel, Junction FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeR-CDFM-F2
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyJUNCTION
- Operating ModeDEPLETION MODE
- Case ConnectionSOURCE
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals2
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandS BAND
- Power Gain-Min (Gp) (dB)12.4
- Transistor Element MaterialSILICON CARBIDE
- DS Breakdown Voltage-Min (V)250
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Operating Temperature-Max (Cel)200
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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2735GN-35M
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2735GN-35M