0405SC-2200M by Microsemi Corporation | Sourcengine

Microsemi Corporation 0405SC-2200M

Lifecycle status
Discontinued
REACH
REACH compliant
Description
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon Carbide, N-Channel, Junction FET
Category
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-CDFP-F2
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
FLATPACK Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
JUNCTION
Operating Mode
DEPLETION MODE
Case Connection
GATE
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
2
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Transistor Element Material
SILICON CARBIDE
DS Breakdown Voltage-Min (V)
250
Operating Temperature-Max (Cel)
250