RF Power Field-Effect Transistors

Bipolar Transistors - BJT trans gp bjt npn 11v 0.05a 3-pin umt t-r

RF Power Field-Effect Transistor

RF JFET Transistors Transistor GaAs Single Voltage

RF Power Field-Effect Transistor

RF Power Field-Effect Transistor

Trans RF MOSFET N-CH 65V 7-Pin CDFM Bulk

RF S BAND, N-CHANNEL , TO-270

FET RF 15V 3.55GHZ

RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

MOSFET N-CH 8V 25MA SOT143R

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

RF FET LDMOS 135V 28DB SOT1121B

RF FET LDMOS 65V 20DB SOT502B

RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

RF Power Field-Effect Transistor

RF Power Field-Effect Transistor

RF Power Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

RF MOSFET HEMT 28V 440166

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Nitride, N-Channel, High Electron Mobility FET

35-W RF Power GaN HEMT

RF Power Field-Effect Transistor

120-W; DC – 8000-MHz; 28 V; GaN HEMT Die

70-W; 4500 to 5900-MHz; internally matched GaN HEMT for C-Band Radar Systems

400-W; 3300 – 3700-MHz; 50-Ohm Input/Output Matched; GaN HEMT for S-Band Radar Systems