Insulated Gate Bipolar Transistors

Insulated Gate Bipolar Transistor

IGBT 390V 20A 125W DPAK-3

Insulated Gate Bipolar Transistor, 65A I(C), 600V V(BR)CES, N-Channel

MOSFET

Insulated Gate Bipolar Transistor, 34A I(C), 3000V V(BR)CES, N-Channel

IGBT, IXA27IF1200HJ, Littelfuse Manufactured through the state-of-the-art GenX IGBT process and an extreme-light punch through design platform, this device features high-current handling capabilities, high-speed switching abilities, low total energy loss, and low current fall times. It has a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Features Easy paralleling due to the positive temperature coefficient of the on-state voltage Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) Applications AC motor drives Solar inverter Medical equipment Uninterruptible power supply Air-conditioning systems Welding equipment Switched-mode and resonant-mode power supplies Inductive heating, cookers Pumps, fans

Insulated Gate Bipolar Transistor, 63A I(C), 1200V V(BR)CES, N-Channel

IGBT Modules XPT IGBT Phaseleg ISOPLUS

IGBT 1200V 9A 45W TO252AA

IGBT 1600V 7A 70W I4PAC

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor, 25A I(C), 1700V V(BR)CES, N-Channel, TO-247AD

IGBT, IXA17IF1200HJ, Littelfuse Manufactured through the state-of-the-art GenX IGBT process and an extreme-light punch through design platform, this device features high-current handling capabilities, high-speed switching abilities, low total energy loss, and low current fall times. It has a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Features Easy paralleling due to the positive temperature coefficient of the on-state voltage Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) Applications AC motor drives Solar inverter Medical equipment Uninterruptible power supply Air-conditioning systems Welding equipment Switched-mode and resonant-mode power supplies Inductive heating, cookers Pumps, fans

Insulated Gate Bipolar Transistor, 30A I(C), 1700V V(BR)CES, N-Channel, TO-247AD

Insulated Gate Bipolar Transistor, 33A I(C), 1400V V(BR)CES, N-Channel, TO-247AD

Trans IGBT Chip N-CH 3000V 30A 160W 3-Pin(2+Tab) D3PAK

Insulated Gate Bipolar Transistor, 92A I(C), 3600V V(BR)CES, N-Channel

Trans IGBT Chip N-CH 1700V 200A 1040W 3-Pin(3+Tab) PLUS 247

Trans IGBT Chip N-CH 2500V 5A 32W 3-Pin(2+Tab) TO-268

Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247AD

Insulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 65A I(C), 1200V V(BR)CES, N-Channel, TO-247AD

Insulated Gate Bipolar Transistor, 1000V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 25A I(C), 1000V V(BR)CES, N-Channel