Insulated Gate Bipolar Transistors

Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel

N-CHANNEL IGBT

Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, TO-220AB

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor, 75A I(C), 1600V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-264AA

Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, TO-220AB

Insulated Gate Bipolar Transistor, 40A I(C), N-Channel, TO-220AB

IGBT 600V 70A 190W TO220

IGBT 600V 60A 220W TO220

Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-220AB

Insulated Gate Bipolar Transistor, 48A I(C), 600V V(BR)CES, N-Channel, TO-220AB

Insulated Gate Bipolar Transistor, 200A I(C), 1000V V(BR)CES

IGBT Transistors discrete igbt high speed series

IGBT 600V 14A 80W TO220

Insulated Gate Bipolar Transistor, 16A I(C), 1000V V(BR)CES, N-Channel, TO-220AB

Insulated Gate Bipolar Transistor, 90A I(C), 330V V(BR)CES, N-Channel

IGBT, IXGT16N170, LITTELFUSE A high voltage IGBT with high current handling capability, a rugged NPT structure, and advantages such as high power density, ease of mounting with one screw, and being suitable for surface mounting. Features International standard package MOS gate turn-on - drive simplicity Molding epoxies meet UL 94 V-0 flammability classification Applications Capacitor discharge and pulser circuits AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies

IGBT 600V 42A 80W ISOPLUS247

IGBT 600V 60A 167W ISOPLUS247

Insulated Gate Bipolar Transistor, 48A I(C), 600V V(BR)CES, N-Channel, TO-268AA